Researchers claim to have reached a goal that will allow SOT-MRAM to become reality sooner, just not too soon.

September 17, 2020 -- GRENOBLE, France-- Antaios, a pioneer in SOT-MRAM technology (Spin-Orbit Torque Magnetic Random-Access Memory), announced today that it has secured 11 million dollars in funding ...

A team of scientists at Johannes Gutenberg University Mainz (JGU) in Germany has now achieved a significant goal in memory technology in close collaboration with Antaios, a magnetic random access ...

R. Gupta et al., Harnessing orbital Hall effect in spin-orbit torque MRAM, Nature Communications 16: 130, 2 January 2025, DOI : 10.1038/s41467-024-55437-x ...

By exploiting previously neglected orbital currents, researchers at JGU and Antaios have developed a unique magnetic material incorporating elements such as Ruthenium as a SOT channel—a ...