Scientists in Germany and France have built a smarter, greener memory tech for devicesThis new SOT-MRAM memory slashes energy ...
September 17, 2020 -- GRENOBLE, France-- Antaios, a pioneer in SOT-MRAM technology (Spin-Orbit Torque Magnetic Random-Access Memory), announced today that it has secured 11 million dollars in funding ...
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Sustainable SOT-MRAM memory technology could replace cache memory in computer architecture in the futureSuccessful industrial collaboration JGU project coordinator Professor Mathias Kläui emphasized his excitement about the successful collaboration with the team of Dr. Marc Drouard at Antaios in ...
By exploiting previously neglected orbital currents, researchers at JGU and Antaios have developed a unique magnetic material incorporating elements such as Ruthenium as a SOT channel—a ...
R. Gupta et al., Harnessing orbital Hall effect in spin-orbit torque MRAM, Nature Communications 16: 130, 2 January 2025, DOI : 10.1038/s41467-024-55437-x ...
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