Researchers claim to have reached a goal that will allow SOT-MRAM to become reality sooner, just not too soon.
September 17, 2020 -- GRENOBLE, France-- Antaios, a pioneer in SOT-MRAM technology (Spin-Orbit Torque Magnetic Random-Access Memory), announced today that it has secured 11 million dollars in funding ...
R. Gupta et al., Harnessing orbital Hall effect in spin-orbit torque MRAM, Nature Communications 16: 130, 2 January 2025, DOI : 10.1038/s41467-024-55437-x ...
By exploiting previously neglected orbital currents, researchers at JGU and Antaios have developed a unique magnetic material incorporating elements such as Ruthenium as a SOT channel—a ...
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Sustainable SOT-MRAM memory technology could replace cache memory in computer architecture ...Successful industrial collaboration JGU project coordinator Professor Mathias Kläui emphasized his excitement about the successful collaboration with the team of Dr. Marc Drouard at Antaios in ...
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