CEA-Leti research engineers have, for the first time, demonstrated a scalable hafnia-zirconia-based ferroelectric capacitor ...

CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor ...

CEA-Leti research engineers in France have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22nm ...

FRAM memory is much faster than Flash memory. Ferroelectric RAM (FeRAM) is a type of non-volatile memory based on electric field orientation and with near-unlimited number (exceeding 1010 for 5V ...

A chance discovery by researchers could drastically lower the energy needed for next-generation memory technologies.

Phase change in phase-change memory PCM was accidentally triggered not by heating, but by a steady current, which means much ...

Information can be stored in the polarization state of a ferroelectric material. At present, ferroelectric memories are read with a capacitive scheme that destroys the information being read.

See BBSRAM and nvSRAM. Cypress Semiconductor's F-RAM is a non-volatile memory that uses a ferroelectric capacitor. It was the first non-volatile memory to use CMOS fabrication, the industry ...

Their findings, published in the journal “Science Advances,” described a lattice arrangement of three different layers of ferroelectric crystals (in this case, of barium titanate, strontium ...