Chinese researchers have discovered the leading cause of defects in the promising semiconductor material gallium nitride (GaN ...
1 shows a white-light LED in action). It is possible to generate light in semiconductor materials (such as GaN or AlInGaP) by injecting electrons into the conduction band of the material and ...
Cambridge GaN Devices, a trailblazer in gallium nitride (GaN) power electronics technology, has closed a $32 million Series C ...
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...