They find that the device has a fundamental frequency of 1.3 GHz, which is a record for a NEMS device. Moreover, when a small amount of iron is deposited onto the nanotube, the resonance frequency ...

Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency ...

The approach uses high-frequency sound waves ... According to Jolanta Soos, sales and marketing manager of acousto-optic devices at Brimrose Corporation of America, the technology is popular ...

The collaboration combines ROHM's device development expertise and TSMC's advanced GaN-on-silicon process technology.

The OPPO Find X8 Series’ display with 2,160Hz PWM dimming technology, significantly minimizing flicker and reducing eye ...

ROHM's strategic collaboration with TSMC will focus on the development and volume production of GaN devices for EVs.