Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access ...
Craig-Hallum analyst Richard Shannon maintained a Buy rating on Everspin Technologies (MRAM – Research Report) today. The company’s shares ...
Scientists in Germany and France have built a smarter, greener memory tech for devicesThis new SOT-MRAM memory slashes energy ...
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Sustainable SOT-MRAM memory technology could replace cache memory in computer architecture in the futureTheir innovation, based on Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM), offers a highly efficient and powerful solution for data processing and storage—a transformative step forward ...
Everspin Technologies (MRAM) announced that its PERSYST MRAM is now validated for configuration across all Lattice Semiconductor Field ...
这种将MRAM与FPGA结合使用的方式，代表了对未来高可靠性系统的一种战略性投入。随着各行业对电子元件的需求不断升级，这类系统将成为“故障零容忍”应用中的最佳解决方案。MRAM不仅是技术的进步，更是对未来技术趋势的重要响应。通过不断创新，FPGA的应 ...
由于MRAM具有卓越的性能特征，它正日益被采用来替代FPGA配置中的传统闪存。它提供高耐久性、快速读写能力和出色的数据保留能力，这些特性对于不能容忍延迟或数据丢失的应用至关重要，如实时传感器处理、航空电子数据记录和空间系统在轨重编程。根据InvestingPro分析，Everspin拥有53.9%的强劲毛利率和6.74的流动比率，显示出强大的运营效率，且流动资产显著超过短期负债。
近日，德国美因茨约翰内斯古腾堡大学（JGU）与法国公司Antaios合作，开发出一种新型的节能存储技术，可能会在未来彻底改变数据存储领域。这项名为自旋轨道扭矩（SOT）磁性随机存取存储器（MRAM）的创新技术，具有显著降低能耗的潜力，将为智能手机、超级计算机等各种智能设备的效率提升带来巨大的推动力。在当前对能源效率日益关注的背景下，此项研究无疑将成为存储技术的一个重要里程碑。
Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access ...
Everspin’s PERSYST MRAM Validated for Configuration Across All Lattice Semiconductor FPGA Families CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s ...
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