Hosted on MSN2mon
TSMC's N2 process has a major advantage over Intel's 18A: SRAM density
Still, Intel's 18A could have other major advantages over N2. Intel's 18A fabrication process features a high-density SRAM bit cell size of 0.021 µm^2 (therefore achieving an SRAM density of ...
Hosted on MSN4d
Intel, Synopsys, TSMC All Unveil Record Memory Densities
Last week at the IEEE International Solid State Circuits Conference, two of the biggest rivals in advanced chipmaking, Intel ...
Design-Reuse28d
Low Power 7T SRAM Cell Scheme - ''Saving Write Zero Power''
By reducing the bitline swing and amplifying the voltage swing by a sense – amplifier, which is a part of the memory cell, the charging and discharging component bit / data lines power consumption is ...
Design-Reuse4y
Addressing SRAM Verification Challenges
SureCore Limited is an SRAM IP company based in Sheffield ... writeability and read correctness (including cell, bit line and sense amplifier), as well as the offset of the sense amplifiers separately ...