Japanese NAND Flash manufacturer Kioxia unveiled its latest advancement in NAND flash memory technology on February 20, featuring an impressive increase to 332 layers, up from the previous 218 layers.
Kioxia Holdings Corp. shares rallied as much as 19%, the most since its listing on the Tokyo Stock Exchange in December last ...
Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8Gb/s NAND interface speed, superior power efficiency, ...
Kioxia, a Japanese chipmaker, saw its shares rise over 9% on Monday, marking the most substantial surge since the company's ...
Companies Preview 10th Generation 3D Flash Memory Technology Setting A New Benchmark for Performance, Power Efficiency and Bit Density SAN ...
Kioxia has projected a return to profitability for fiscal 2024 (April 2024 - March 2025). However, its capex is expected to ...
Japanese semiconductor maker Kioxia Holdings says it expects to post its first annual profit in three years. The turnaround ...
Asia-Pacific markets were set to open mixed Tuesday, a day after Chinese President Xi Jinping signaled support to the country ...
The FTSE 100 was expected to open 14 points higher, or 0.2%, with talks for a Ukraine peace deal and potential spending from European countries in focus.
IT之家 2 月 20 日消息，铠侠（Kioxia）携手闪迪（SanDisk），在 2025 年 IEEE ISSCC 学术会议上，针对 AI 应用场景，推出全新 3D 闪存解决方案，将 NAND 接口速度提升至惊人的 4.8 Gbps。该 3D ...
铠侠此次开发的是被称为第10代的技术。与目前第8代的218层产品相比，输入数据时的电力效率提高10%，输出时提高34%。单位面积的存储容量提高59%。今后将在日本国内生产，具体时间尚未确定。竞争对手也在开发300层左右的下一代产品。
铠侠和闪迪还展望第九代和第十代 3D 闪存产品，第九代产品利用 CBA 技术融合现有存储单元技术和新 CMOS 技术，实现高性价比。第十代产品将进一步提升容量、速度和功耗表现，满足未来数据中心和 AI 应用需求。
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