新型内存技术：SOT-MRAM或成DRAM和NAND替代者
德国美因茨约翰内斯古腾堡大学（JGU）与法国公司Antaios合作开发了一种基于自旋轨道扭矩（SOT）的磁阻随机存取存储器（MRAM），这项技术有望大幅降低数据存储的功耗，成为DRAM和NAND的替代者。研究团队利用轨道霍尔效应，解决了传统SOT-M ...
全新SOT-MRAM：未来存储的革命性解决方案
近日，德国美因茨约翰内斯古腾堡大学（JGU）与法国公司Antaios合作，开发出一种新型的节能存储技术，可能会在未来彻底改变数据存储领域。这项名为自旋轨道扭矩（SOT）磁性随机存取存储器（MRAM）的创新技术，具有显著降低能耗的潜力，将为智能手机、超级计算机等各种智能设备的效率提升带来巨大的推动力。在当前对能源效率日益关注的背景下，此项研究无疑将成为存储技术的一个重要里程碑。
Researchers claim to have reached goal that will allow SOT-MRAM to become reality sooner
Researchers claim to have reached a goal that will allow SOT-MRAM to become reality sooner, just not too soon.
idw19 天
Toward sustainable computing: Energy-efficient memory innovation
R. Gupta et al., Harnessing orbital Hall effect in spin-orbit torque MRAM, Nature Communications 16: 130, 2 January 2025, DOI : 10.1038/s41467-024-55437-x ...
EurekAlert!20 天
Toward sustainable computing: Energy-efficient memory innovation
By exploiting previously neglected orbital currents, researchers at JGU and Antaios have developed a unique magnetic material incorporating elements such as Ruthenium as a SOT channel—a ...
Design-Reuse4 年
SOT-MRAM Pioneer Antaios Secures 11 Million Dollars in Funding
September 17, 2020 -- GRENOBLE, France-- Antaios, a pioneer in SOT-MRAM technology (Spin-Orbit Torque Magnetic Random-Access Memory), announced today that it has secured 11 million dollars in funding ...