A research team from Germany's Fraunhofer ISE and France's Centre for Nanoscience and Nanotechnology (C2N) claim to have developed an ultra-thin solar cell based on Gallium arsenide (GaAs), which ...

According to the scientists, these values show the potential of low-bandgap GaInNAsSb to achieve current matching in advanced solar cells with five or more junctions. “While the MBE production ...