50V耐压GaN HEMT新增小型、高散热TOLL封装
全球知名半导体制造商ROHM（总部位于日本京都市）已将TOLL（TO-LeadLess）封装的650V耐压GaN ...
Machine Design6 天
Humanoid Robot System Design
Navigation and sensing in humanoid robots involves real-time data acquisition gathered from sensors to obtain input for ...
650V耐压GaN HEMT新增小型与高散热TOLL封装
全球知名半导体制造商ROHM（总部位于日本京都市）已将TOLL（TO-LeadLess）封装的650V耐压GaN ...
Electronics Weekly12 天
Driving a GaN half-bridge? You might want to know this
A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data ...
Electronic Products3 天
TI claims first space-grade 200-V GaN FET gate driver
TI's space-grade GaN FET gate drivers support the entire voltage range needed to design satellite power systems.
Power Integrations projects 15% Q1 2025 revenue growth amid GaN adoption and industrial ...
Q4 2024 Management View CEO Balu Balakrishnan announced his impending retirement, stating plans to step back from his role after 23 years. The Board has initiated a search for a new CEO, considering ...
Yahoo Finance19 天
Navitas’ GaN & SiC Devices Power Dell’s™ Family of AI Notebooks
Feb. 05, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast ...