盖世汽车讯 据外媒报道，为超高效、高性能和高压应用提供优质碳化硅（SiC）解决方案的设计商、开发商和全球供应商SemiQ Inc宣布推出一系列1700 V SiC MOSFET，旨在满足中压高功率转换应用的需求，例如光伏和风能逆变器、储能、电动汽车和路边充电、不间断电源以及感应加热/焊接。 图片来源：SemiQ 该高速QSiC™ 1700 V开关平面D-MOSFET可实现更紧凑的大规模系统设计，具 ...

The MOSFETs deliver low switching and conduction losses, low capacitance and feature a rugged gate oxide for long-term reliability, with 100 per cent of components undergoing wafer-level burn in (WLBI ...

The MOSFETs deliver low switching and conduction losses and low capacitance and feature a rugged gate oxide for long-term reliability, with 100% of components undergoing wafer-level burn-in (WLBI) to ...

AEC-Q101 qualified bare die and discrete packaged devices undergo WLBI screening and are tested for avalanche breakdown voltage exceeding 2200 V. SemiQ Inc., has introduced a new family of 1700 V SiC ...

The MOSFETs deliver low switching and conduction losses, low capacitance and feature a rugged gate oxide for long-term reliability, with 100 percent of components undergoing wafer-level burn in (WLBI) ...

The MOSFETs deliver low switching and conduction losses, low capacitance and feature a rugged gate oxide for long-term reliability, with 100 percent of components undergoing wafer-level burn in (WLBI) ...

These MOSFETs deliver low switching and conduction losses, low capacitance, and enhanced reliability through a durable gate oxide. Each component undergoes wafer-level burn-in (WLBI) to filter out ...