The Centre for Electronics Frontiers, Institute for Integrated Micro and Nano Systems, School of Engineering, University of Edinburgh, Edinburgh, United Kingdom Recently, there has been notable ...

In recent years, PUFs based on resistive random access memory (RRAM) have demonstrated excellent reliability and integration density. Most previous designs store PUF keys directly in RRAMs, increasing ...

In recent years, new storage technologies represented by phase-change random-access memory (PCRAM), resistance random-access memory (RRAM), magnetic random-access memory (MRAM), and ferroelectric ...