In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...

This article conducts a comparative analysis of a variety of 3D DRAM technologies with capacitor or capacitor-less storage mechanisms, focusing on vertical bitline (VBL) and vertical wordline (VWL) ...

Charge Sharing Mechanism: When a DRAM cell is accessed, its capacitor releases a tiny amount of electrical charge onto a much larger bit line. If the cell stores a “1,” the small charge must elevate ...

Nestled in the charming town of New Castle, Delaware, stands a building that’s seen more drama than a Shakespeare festival – ...

The new 40 nm technologies also leverage innovative high-dielectric (high-k) materials— such as hafnium gate dielectrics, nickel-silicide gate electrodes, and zirconium-oxide DRAM capacitors—that have ...

This makes it extremely expensive to produce in terms of cost, complexity, and chip area compared to DRAM. Dynamic RAM, on the other hand, stores data in a tiny capacitor rather than using logic ...

A new approach to materials engineering promises to overcome the limitation of capacitors commonly used in smartphones, displays and electric vehicles, according to a study published in Nature.

Using 3D process models to predict the impact of mechanical stress on yield and performance. With the semiconductor industry ...

Chip manufacturers are actively promoting price rises in the second quarter, leading to an expected rise in DRAM and NAND flash prices during this period. Save my User ID and Password Some ...