中国台湾研究院半导体中心研究员杨智超指出，双方合作成功研发出的 “新型高密度、高频宽 3D 动态随机存取存储器”，可应用于 AI 芯片中的 HBM 内存。目前，全球仅有少数顶尖研究团队提出了这种 3D DRAM ...

Micron Technology has delivered its sixth-generation 10nm DRAM samples ahead of schedule, pressuring Samsung Electronics as ...

In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...

Sandisk's upcoming 3D Matrix Memory promises DRAM-like performance at four times the capacity and half the cost.

Micron's 1γ fabrication technology with EUV, new HKMG, and BEOL promises to increase performance while cutting power ...

Micron's memory technology is taking another step forward with the launch of its new 1γ (1-gamma) DRAM, pushing DDR5 speeds ...

Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...

Increased competition from Chinese makers may force leading DRAM makers to phase out DDR3 and DDR5 SDRAM by end of the year.

According to the official press release Micron Technology announced the shipment of samples of its 1γ, sixth-generation (10nm ...

Improved bit-density output — Micron’s 1γ node, leveraging EUV lithography, design optimizations and process innovations, results in greater than 30% more bits-per-wafer output over the previous ...

Numemory has 64Gb and 128Gb storage class memory devices with industry-standard NAND interface that could be used for SSDs, ...

Technology announced it is the first in the industry to ship samples of its 1gamma, sixth-generation DRAM node-based DDR5 memory ...