Arrhenius equation: R = A exp {-qE a / kT} (Equation 7.1) where R is the deposition rate, A is the frequency factor, q is the electronic charge, E a is the activation energy, k is the Boltzmann's constant, and T is the absolute temperature. The activation …
LPCVD in-situ doped silicon for thermoelectric applications
2018年1月1日 · In this study we have analyzed an alternative approach via low pressure chemical vapor deposition (LPCVD) in-situ phosphorus doping with subsequent rapid thermal anneal (RTA) on 150 mm/300 mm wafers in order to obtain Si-based materials for thermoelectric applications.
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Chapter 7
Polysilicon can be doped by adding phosphine, arsine, or diborane to the reactants (in-situ doping). Adding diborane causes a large increase in the deposition rate because diborane forms borane radicals, BH 3, that catalyze gas-phase reactions and increase the deposition rate.
A First-Principle Study of B- and P-Doped Silicon Quantum Dots
2012年6月27日 · In this paper, we carry out first-principle calculations of impurity states in spherical Si QDs doped with single B or P atom. Both the structural and electronic properties (band structure and DOS) are investigated as functions of the QD size and of the impurity position within the Si QD.
Equation 8.3 is often referred to as Fick's Second Law of Diffusion. Figure 8.3 displays the measured diffusion coefficients for low concentrations of various dopant impurities in silicon and gallium arsenide.
Arrhenius plot of silcore deposition rate versus temperature for ...
For phosphorous-doped SiH 4 films, typical deposition rates are 10–25Å/min for deposition temperatures in the range of 520-550°C. Some suppression of the deposition rate is observed when PH 3 is...
Electrical characterization of thin silicon-on-insulator films doped …
2023年8月15日 · In this work, we focused on the electrical characterization of silicon-on-insulator (SOI) samples with a 30 nm thick device layer doped by means of phosphorus end-terminated polymers.
Nanoscale doping of polymeric semiconductors with confined ...
2024年4月22日 · Here we present a concept, namely, nanoconfined electrochemical ion implantation (NEII) doping, that allows for precise doping of polymer by localizing the driving field for counterion migration...
Structure of an In Situ Phosphorus-Doped Silicon Ultrathin Film ...
2022年12月4日 · A substitutional P site is modeled by interpreting a P-vacancy (P-V) cluster into a vacancy cell with Si-vacancy (Si-V) and P-V bonds. To validate the proposed model, we performed Ani-RSHG experiments on a Si ultrathin film doped with various P concentrations.
We studied accelerated diffusion of phosphorus in a single crystal of silicon, which takes place during decomposition of a over-saturated inhomogeneous s lid solution. A thin (1.5-2 ~m) doped layer was formed by low-temperature diffusion from the gas phase.