DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3.
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. Figure 5. Temperature Coefficients. Figure 7. Capacitances. Figure 9. Turn−Off Time. Figure 6. Switching Time Test Circuit. Figure 8. Turn−On Time. Figure 10. Safe Operating Area.
The 2N5401 and SOC5401 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
2N5401 Rev.F Mar-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , 2N5551 High voltages, complementary pair with 2N5551. / Applications General purpose high voltage amplifier.
device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS
2N5401 PNP Transistor TO-92 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Electrical Characteristics (TA=25°C unless otherwise noted) 1/4 2. BASE 3. COLLECTOR 1. EMILTTER Features Switching and amplification in high voltage applications such as telephony
Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
NXP Semiconductors Product data sheet PNP high-voltage transistor PMST5401 FEATURES •Low current (max. 300 mA) •High voltage (max. 150 V). APPLICATIONS •General purpose •Telephony. DESCRIPTION PNP high-voltage transistor in a SOT323 plastic package. NPN complements: PMST5550 and PMST5551. MARKING Note 1. ∗ = - : Made in Hong Kong.