In semiconductor industry doping of polysilicon materials is often achieved with ion-implantation, provoking a relatively high thermal budget. In this study we have analyzed an alternative approach via low pressure chemical vapor deposition (LPCVD) in-situ phosphorus doping with subsequent rapid the...

Ex-situ doping of 30 nm thick silicon-on-insulator (SOI) substrates is performed by using polymers terminated with a doping containing moiety. Poly(methylmetachrylate) polymers with a P containing moiety are used to create a phosphorus δ-layer at the interface between the Si device layer and a 10 nm...

In fabricating advanced silicon (Si)-based metal–oxide semiconductors, the ability to inspect dopant distribution in Si ultrathin films (tens of nm) is crucial for monitoring the amount of dopant diffusion. Here, we perform an anisotropic reflective second harmonic generation (SHG) measurement to de...

Thin film wide band gap p-type hydrogenated amorphous silicon (a-Si) oxide (p-a-SiOx:H) materials were prepared at 175 °C substrate temperature in a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and applied to the window layer of a-Si solar cell. We used nitrous oxide (N2O), h...