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LPCVD in-situ doped silicon for thermoelectric applications
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Chapter 7
A First-Principle Study of B- and P-Doped Silicon Quantum Dots
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Arrhenius plot of silcore deposition rate versus …
For phosphorous-doped SiH 4 films, typical deposition rates are 10–25Å/min for deposition temperatures in the range of 520-550°C. Some suppression of the deposition rate is observed when PH 3 is...
Electrical characterization of thin silicon-on-insulator films doped …
Nanoscale doping of polymeric semiconductors with confined ...
Structure of an In Situ Phosphorus-Doped Silicon Ultrathin Film ...
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