complicated Interference Patterns of HRTEM IMAGES. Through careful experimentation, image acquisition and simulation of HRTEM images, we can reconstruct the projected potential of the specimen and determine its atomic structure. The common method for simulating HRTEM images is the multi-slice
HRTEM images of MoS2 nanosheets (a) low magnification TEM image …
In this work, we have synthesized MoSe2 and WSe2 nanosheets (NSs) via a liquid-phase exfoliation method and investigated these NSs as channel materials in field-effect transistors (FET). The...
Strain mapping in MOSFETS by high-resolution electron microscopy and ...
2008年12月5日 · We present two methods for mapping strains in MOSFETs at the nanometer scale. Aberration-corrected high-resolution transmission electron microscopy (HRTEM) coupled with geometric phase analysis (GPA) provides sufficient signal-to-noise to accurately determine strain fields across the active regions of devices.
As an illustration, Fig 6 a) shows a HRTEM image of a MOSFET gate in cross-section. The gate dielectric layer is ~2nm thick, and the gate length is <50nm. While several surface analysis techniques like SIMS and XPS have excellent depth resolution, they do not possess sufficient lateral resolution to analyze patterned devices. Spatially
HRTEM image simulations for gate oxide metrology
2000年2月10日 · In this study, we performed HRTEM image simulations of a MOSFET device to examine the accuracy of HRTEM in measuring gate oxide thickness. Length measurements extracted from simulated images were compared to actual dimensions in the model structure to assess TEM accuracy.
HRTEM image simulations for gate oxide metrology
2000年1月1日 · In this study, we performed HRTEM image simulations of a MOSFET device to evaluate the accuracy of HRTEM in measuring gate oxide thickness. Gate oxide thickness measurements extracted from...
HRTEM Image Simulations for Gate Oxide Metrology
2020年7月2日 · In this study, we performed HRTEM image simulations of a MOSFET device to examine the accuracy of HRTEM in measuring gate oxide thickness. Length measurements extracted from simulated images were compared to actual dimensions in the model structure to assess TEM accuracy.
HRTEM image simulations of structural defects in gate oxides
2001年1月29日 · In this study, we performed HRTEM image simulations of a MOSFET device to determine the ability of HRTEM to detect gate oxide defects. The gate oxide was modeled as an amorphous silicon oxide 16.3 Å-thick, sandwiched between a gate and substrate.
HREM TEM simulations are needed to interpret the contrast mechanisms and complicated Interference Patterns of HRTEM IMAGES. Through careful experimentation, image acquisition and simulation of HRTEM images, we can reconstruct the projected potential of the specimen and determine its atomic structure.
(a) Schematic of MOSFET Si-based device; (b) Cross-section HRTEM image …
Download scientific diagram | (a) Schematic of MOSFET Si-based device; (b) Cross-section HRTEM image (left) of nanoscale SiO 2 gate dielectric inducing quantum tunneling high-electron current...
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