Single-crystal, large-area, fold-free monolayer graphene | Nature
2021年8月25日 · Here we explore the wrinkling/folding process for graphene films grown from an ethylene precursor on single-crystal Cu–Ni (111) foils. We identify a critical growth temperature (1,030 kelvin)...
Wafer-scale single-crystal monolayer graphene grown on …
2022年1月20日 · In our study, we report the growth of adlayer-free ultra-flat wafer-scale single-crystal monolayer graphene on electrically insulating Al 2 O 3 (0001) wafers by a multi-cycle plasma...
Wafer-Scale Growth of Single-Crystal Monolayer Graphene on …
2014年4月3日 · Lee et al. (p. 286, published online 3 April) showed that flat, single crystals of monolayer graphene can be grown by chemical-vapor deposition on silicon wafers covered by a germanium layer that aligns the grains. The graphene can be dry-transferred to other substrates, and the germanium layer can be reused for further growth cycles.
Continuous epitaxy of single-crystal graphite films by isothermal ...
2022年10月27日 · Here we propose a continuous epitaxial method to realize the growth of high-quality, single-crystal graphite following the ‘bottom growth’ route, in which a solid carbon source is placed on one...
Synthesis of Large-Area Single-Crystal Graphene - ScienceDirect
2021年1月1日 · The layer-by-layer assembly of adlayer-free single-crystal graphene films could be a viable method for producing large area multilayer graphene films with a specific number of layers and defined stacking angles. We call this material an ‘artificial graphene single crystal’ because it cannot be made by any direct growth method.
Edge-controlled growth and kinetics of single-crystal graphene ... - PNAS
2013年12月2日 · We demonstrate the growth of single-crystal graphene domains with controlled edges that range from zigzag to armchair orientations via growth–etching–regrowth in a chemical vapor deposition process.
Wafer-scale growth of single-crystal graphene on vicinal …
2020年10月1日 · The obtained single-crystal graphene wafer possesses an ultrahigh carrier mobility comparable to that of exfoliated graphene, as evident by terahertz time-domain spectroscopy (THz-TDS), which constitutes a significant advance toward the manufacturing of graphene-based nanoelectronic devices and circuits.
Ultrafast epitaxial growth of metre-sized single-crystal graphene …
2017年8月15日 · Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of (5 × 50) cm 2 dimension with >99% ultra-highly oriented grains.
The Role of Surface Oxygen in the Growth of Large Single-Crystal ...
2013年11月8日 · We show that oxygen (O) on the Cu surface not only suppresses graphene nucleation, fostering growth of ultralarge single-crystal graphene domains, but also lowers the C species edge attachment barrier and shifts the graphene domain shapes from compact to …
Controlled Growth of Single‐Crystal Graphene Wafers on …
2023年10月25日 · Single-crystal graphene (SCG) wafers are needed to enable mass-electronics and optoelectronics owing to their excellent properties and compatibility with silicon-based technology. Controlled synthesis of high-quality SCG wafers can be done exploiting single-crystal Cu (111) substrates as epitaxial growth substrates recently.